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VBT6045CBP
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Vishay General Semiconductor
Revision: 22-May12
2
Document Number: 89374
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ?
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF
= 10 A
= 15 A 0.47 -
TA
= 25 °C
= 30 A 0.54 0.64
VF
(1)
IF
= 10 A
0.33 -
0.44 -
V
IF
IF
= 15 A 0.37 -
TA
= 125 °C
IF
IF
= 30 A 0.47 0.56
Reverse current per diode VR
= 45 V
TA
= 25 °C
= 125 °C 18 50 mA
IR
(2)
- 3000 μA
TA
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT6045CBP UNIT
Typical thermal resistance
per diode
R?JC
per device 0.8
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB VBT6045CBP-E3/4W 1.38 4W 50/tube Tube
TO-263AB VBT6045CBP-E3/8W 1.38 8W 800/reel Tape and reel
0
5
10
15
20
25
30
35
40
45
50
55
60
65
100 120 140 160 180 200
DC Forward Rectifed Current (A)
Case Temperature (°C)
DC Forward Current at
Thermal Equilibrium
0
2
12
14
16
20
0 5 15 30 3510
20
25
Average Forward Current (A)
Average Power Lo
ss
(W)
D = 0.1
D = 0.2
D = 0.5
D = 0.3
D = 0.8
D = 1.0
D = tp/T tp
T
6
8
10
4
18
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